| Tech. Node |
Process |
Process Description |
CALIBRE |
ASSURA |
Argus |
| 0.11μm |
Eflash |
P-sub, 1.5V/3.3V/5V |
√ |
|
|
| 0.13μm |
Mixed-Signal/RF |
P-sub,1.2V/3.3V Including RF |
√ |
|
|
| 0.153μm |
MCU |
P-sub,5V Including RF |
√ |
|
|
| CMOS |
P-sub,7V |
√ |
|
|
| 0.16μm |
Logic |
P-sub,1.8V/3.3V |
√ |
|
|
| Mixed-Signal/RF |
P-sub,1.8V/3.3V, including RF |
√ |
|
|
| 0.18μm |
Logic |
P-sub, 1.8V/3.3V |
√ |
|
|
| Mixed-Signal/RF |
P-sub,1.8V/3.3V, including RF |
√ |
√ |
|
| HV |
P-sub, 1.8V/5V |
√ |
|
|
| 1.8V 18V VGS 18V VDS HVMOS Process |
√ |
|
|
| MCU |
P-sub, 3.3V/5V/6V |
√ |
√ |
|
| BCD |
P-sub, 3.3V/5V |
√ |
|
|
| 25VBCD |
P-sub,1.8V&5V VGS 25V VDS Non-EPI BCD |
√ |
|
|
| P-sub,1.8V&5V VGS 25V VDS P-EPI BCD |
√ |
|
|
| eflash |
P-sub,1.8V&3.3V&5V |
√ |
|
|
| SourceDriver |
1.8v&18v |
√ |
|
|
| 3.3v&13.5v |
√ |
|
|
| 3.3v&18v |
√ |
|
|
| BCD |
7-30V scalable P-EPI BCD DB |
√ |
|
|
| DB SBCD G2S 7V 80V Process |
√ |
|
|
| DB SBCD G2S 80V 120V Process |
√ |
|
|
| DB SBCD G3 Process |
√ |
|
|
| AB SBCD G1 7V 30V Process |
√ |
|
|
| AB SBCD G1S Process |
√ |
|
|
| EEPROM |
EEPROM |
√ |
|
|
| 0.25μm |
BCD |
5V VGS 25V VDS 2P5M |
√ |
|
|
| 5V VGS 12V/45V VDS 2P5M |
√ |
|
|
| 30V60V |
√ |
|
|
| 1P4M Salicide 5V Analog |
√ |
|
|
| 0.35μm |
Flatcell |
P-sub,5V SPQM, 0.7μm *0.7μm flatcell cell, single poly, 4 metal |
√ |
√ |
|
| P-sub,3.3V/5V, 0.7μm *0.7μm flatcell, single poly, |
√ |
√ |
|
| single metal |
| P-sub, 3.5V/5V, 0.63μm *0.63μm flatcell, dual gate oxide |
√ |
|
|
| Mixed-Signal |
P-sub,3.3V/5V |
√ |
|
√ |
| OTP |
Mix OTP DPQM 3.3V 5V |
√ |
|
|
| BCD |
3.3V Vgs 12V_15V Vds |
√ |
|
|
| Logic G2 |
3.3V |
√ |
|
|
| 0.5FEOL/0.35BEOL |
Mixed-Signal |
0.5FEOL/0.35BEOL |
√ |
|
|
| 0.5FEOL/0.35BEOL 1.8fF/um^2 |
√ |
|
|
| Plain-poly, 3~5V |
√ |
|
|
| 0.5μm |
Mixed-Signal |
Enhance Analog for 5V |
√ |
|
|
| P-Sub,5V, with PIP/High P2/LVt/Depletion |
√ |
√ |
√ |
| P-Sub,5V, with PIP/High P2/LVt/Depletion 1.8FF Cpip |
√ |
|
|
| HV |
P-sub,40V/25V process |
√ |
√ |
|
| P-sub,Deep Nwell 5V process |
√ |
√ |
|
| P-sub,5V/18V process |
|
|
|
| BCD |
0.5um 15V(VGS)/15V(VDS) DPTM BCDMOS Process |
√ |
√ |
|
| 0.5um 5V(VGS)/15V(VDS) DPTM BCDMOS Process |
√ |
√ |
|
| 0.5um 5V(VGS)/25V(VDS) DPTM BCDMOS Process |
√ |
√ |
|
| 0.5um 25V(VGS)/25V(VDS) DPTM BCDMOS Process |
√ |
√ |
|
| 0.5um 5V(VGS)/40V(VDS) DPTM BCDMOS Process |
√ |
|
|
| 0.5μm FEOL 0.6μm BEOL |
|
|
|
| P-sub,18V/20V thick_ox BCDMOS process |
√ |
√ |
|
| P-sub,5V/20V thin_Gox BCDMOS process |
√ |
√ |
|
| P-sub,5V/40V thin_Gox BCDMOS process |
√ |
√ |
|
| P-sub,25V/40V thick_Gox BCDMOS process |
√ |
√ |
|
| 0.6μm |
Logic |
P-sub,5V,plain poly, before N-ROM |
√ |
|
|
| P-sub,LV,plain poly, before N-ROM |
√ |
|
|
| N-sub,5v,N-ROM before plain poly |
√ |
|
|
| Mixed- Signal |
P-sub, 5V, PIP/High P2 |
√ |
|
|
| P-sub, 5V, PIP/High P2,LVt, Depletion |
√ |
|
|
| HV |
N-sub, 5V-18V |
√ |
|
|
| 1.0μm |
MGLV |
N-Sub,1.5-5V |
√ |
|
|
| N-Sub,3.0-5V |
√ |
|
|
| HV |
P-sub,5V/40V |
√ |
|
|
| P-sub,5V/40V, 0.5μm backend, and thick Al2 is option |
√ |
|
|
| P-sub,5V/25V, 0.5μm backend, and thick Al2 is option(HV GOX 600A) |
√ |
|
|
| 2.0μm |
36V |
DN, Nitride Cap, 1M |
√ |
|
|
| DN, Nitride Cap, P-, P+, 1M |
√ |
|
|
| 18V (5μm Tepi) |
DN,SiN Cap, 1M(5μm EPI) |
√ |
|
|
Reference Flow
Physical Verification Tools
